HL8545/G
Quad Channel 50mΩ High Side Switch
Overview
The HL8545/G are quad-channel, high side power switch with an integrated NMOS power FET and charge pump. The device integrates advanced protective functions such as load current limitation, overload active management by power limitation and overtemperature shutdown with configurable latch-off. Full diagnostics and high-accuracy current sense features enable intelligent control of the load. In reverse battery condition, the HL8545 need external ground diode to block the reverse current from ground to battery. While the HL8545G needn’t such ground diode.
An active drain and source voltage clamp is built into address switching off the energy of inductive loads, such as relays, solenoids, pumps, motors, and so forth. During the inductive switching-off cycle, both the energy of the power supply (EBAT) and the load (ELOAD) are dissipated on the high-side power switch itself. With the benefits of process technology and excellent IC layout, the HL8545/G can achieve excellent power dissipation capacity, which can help save the external free-wheeling circuitry in most cases.
For more detailed description of the device, please download a product brief.
Features
- Quad channels high side power switch with full diagnostics
- Operating voltage range, 4 V ~ 28 V
- Very-low standby current, <0.5 μA
- AEC-Q100 Qualified:
- Device temperature grade 1: –40°C to 125°C
- Operating junction temperature, –40°C to 150°C
- 3.3 V and 5V compatible control logic
- High-accuracy current sense, ±10% at 4.5 A
- Protections
- Overload and short-circuit protection
- Inductive load negative voltage clamp
- Undervoltage lockout (UVLO) protection
- Thermal shutdown/swing protection
- Pin configurable latch-off or auto-retry mode on overtemperature event
- Loss of GND, loss of supply protection
- Reverse battery protection
- HL8545, with external ground diode
- HL8545G, without external ground diode
For more information or a full datasheet request, please contact the factory at sales@hmisemi.com.